Method for improving thickness uniformity of deposited ozone-TEOS silicate glass layers

ABSTRACT

A method for depositing highly conformal silicate glass layers via chemical vapor deposition through the reaction of TEOS and O 3  is provided, comprising placing an in-process semiconductor wafer having multiple surface constituents in a plasma-enhanced chemical vapor deposition chamber.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of application Ser. No. 10/371,674,filed Feb. 21, 2003, pending, which is a continuation of applicationSer. No. 08/841,908, filed Apr. 17, 1997, now U.S. Pat. No. 6,551,665,issued Apr. 22, 2003.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to processes for depositing compounds by means ofchemical vapor deposition and, more particularly, to processes fordepositing silicon dioxide layers using ozone and tetraethylorthosilaneas precursor compounds.

2. State of the Art

Doped and undoped silicon dioxides, which are commonly referred to assilicate glasses, are widely used as dielectrics in integrated circuits.Although silicon dioxide possesses a tetrahedral matrix which willimpart a crystalline structure to the material under proper heating andcooling conditions, the silicon dioxides used as dielectrics inintegrated circuits are typically amorphous materials. This applicationuses the term “silicate glass” to refer to silicon dioxides depositedvia chemical vapor deposition (CVD), as the term encompasses materialscontaining not just silicon dioxide, but dopants and other impurities aswell.

Chemical vapor deposition of silicate glasses has become of paramountimportance in the manufacture of contemporary integrated circuits. Forexample, silicate glass doped with both boron and phosphorous is widelyused as an interlevel dielectric and as a getter material for mobilesodium ions.

Chemical vapor deposition (CVD) of silicate glasses by the semiconductorindustry is most commonly accomplished by reacting tetraethylorthosilane(TEOS), silane or disilane with an oxidizer. Silane is typically reactedwith diatomic oxygen (O₂) or nitrous oxide (N₂O) at a temperature ofabout 400° C. TEOS, on the other hand, is generally reacted with eitherO₂ or ozone (O₃). If a low reaction temperature is desirable, the use ofozone permits a reduction in the reaction temperature to about half thatrequired for O₂. For the sake of brevity, glass layers deposited fromthe reaction of O₃ and TEOS shall be termed “ozone-TEOS glasses.” Thereaction temperature may also be reduced for the TEOS-O₂ reaction bystriking a plasma in the deposition chamber. Glasses deposited via thisplasma-enhanced chemical vapor deposition (PECVD) method shall bereferred to hereinafter as PECVD-TEOS silicate glasses. The plasmagenerates highly reactive oxygen radicals which can react with the TEOSmolecules and provide rapid deposition rates at much reducedtemperatures.

Silane is used for the deposition of silicate glasses when substratetopography is minimal, as the deposited layers are characterized by poorconformality and poor step coverage. Silicate glasses deposited from thereaction of TEOS with O₂ or O₃ are being used with increasing frequencyas interlevel dielectrics because the deposited layers demonstrateremarkable conformality that permits the filling of gaps as narrow as0.25 μm. Unfortunately, the deposition rate of silicate glass formed bythe reaction of TEOS and O₃ is highly surface dependent. A particularlyacute problem arises when the deposition is performed on a surfacehaving topographical features with non-uniform surface characteristics.For example, the deposition rate is very slow on PECVD-TEOS glasslayers, considerably faster on silicon and on aluminum alloys, andfaster still on titanium nitride, which is frequently used as ananti-reflective coating for laser reflow of aluminum alloy layers. Acorrelation seems to exist between the quality and relative depositionrate of ozone-TEOS glass layers. For example, ozone-TEOS glass layersthat are deposited on PECVD-TEOS glass layers have rough, poroussurfaces and possess high etch rates.

In U.S. Pat. No. 5,271,972 to K. Kwok et al., it is suggested that thesurface sensitivity of ozone-TEOS glass layers deposited on PECVD-TEOSglass layers may be related to the presence of a hydrophilic surface onthe PECVD-TEOS glass layers. A hydrophilic surface on the PECVD-TEOSglass layer may be attributable to embedded elemental carbon particleswhich are formed as the TEOS precursor gas is attached by oxygenradicals generated by the plasma. As elemental carbon particles arecharacteristically hydrophilic, they repel TEOS molecules, which arecharacteristically hydrophobic, and interfere with their absorption onthe surface of the deposited layer. Thus, the poor absorption rate ofTEOS molecules on the surface of PECVD-TEOS glass results in slowlydeposited, poor-quality films. Experimental evidence indicates thatdeposition rates are low for hydrophilic surfaces and high forhydrophobic surfaces. For example, titanium nitride, being highlyhydrophobic, readily absorbs TEOS molecules on its surface, whichaccelerates the deposition reaction.

Given the surface-dependent variation in deposition rates, it is notuncommon for ozone-TEOS glass layers to build up rapidly around aluminumconductor lines and much more slowly on PECVD glass layers on which theconductor lines are fabricated, thereby forming cavities of tear-dropcross section between adjacent conductor lines. FIG. 1 is across-sectional view which depicts the undesirable result obtained byconventionally depositing an ozone-TEOS layer 11 over aluminum conductorlines 12 which overlie an underlying PECVD-TEOS glass layer 113. Priorto patterning, the aluminum conductor lines 12 were covered with atitanium nitride layer which served as an anti-reflective coating duringa laser reflow operation. A titanium nitride layer 14 remnant is presenton the upper surface of each aluminum conductor line 12. A cavity 15having a teardrop-shaped cross section has formed between each pair ofaluminum conductor lines 12. Cavities in an interlevel dielectric layerare problematic primarily because they can trap moisture when thedeposited glass layer is subjected to a planarizing chemical mechanicalpolishing step during a subsequent fabrication step. The moisture, ifnot completely removed prior to the deposition of subsequent layers, cancorrode metal conductor lines during normal use and operation of thepart, or it may cause an encapsulated integrated circuit device torupture if the steam generated as the device heats up is unable toescape the package.

In U.S. Pat. No. 5,271,972, a technique is disclosed for improving thefilm quality of ozone-TEOS glass layers deposited on PECVD-TEOS glasslayers. The method involves depositing the underlying PECVD-TEOS layerusing high pressure and a high ozone-to-TEOS flow rate. For the lastseveral seconds of the plasma-enhanced deposition process, a stepwisereduction in reactor power is carried out. It is claimed that thistechnique produces an interstitial silicon dioxide layer at the surfaceof the PECVD-TEOS layer which greatly reduces the surface sensitivity ofsubsequently deposited ozone-TEOS oxide layers.

BRIEF SUMMARY OF THE INVENTION

This invention provides an alternative method for depositing highlyconformal silicate glass layers via chemical vapor deposition throughthe reaction of TEOS and O₃ and for minimizing surface effects ofdifferent materials on the deposition process.

The entire method, which can be performed in a single cluster tool oreven in a single chamber, begins by placing an in-process integratedcircuit having multiple surface constituents in a plasma-enhancedchemical vapor deposition chamber. A “clean” silicate glass base layerthat is substantially free of carbon particle impurities on an uppersurface thereof is then formed on the wafer surface in one of two ways.

The first way of forming the clean base layer employs plasma-enhancedchemical vapor deposition using TEOS and diatomic oxygen gases asprecursors to first deposit a “dirty” silicate glass base layer havingcarbon particle impurities imbedded on the upper surface. Glass layersdeposited via PECVD by the reaction of TEOS and O₂ tend to haveelemental carbon particles embedded therein. As these particles mayimpart hydrophilic surface characteristics to the deposited glass layerwhich may interfere with the subsequent deposition of dense,high-quality ozone-TEOS glass layers, the glass base layer is subjectedto a plasma treatment which involves flowing a mixture of anoxygen-containing diamagnetic oxidant, such as ozone or hydrogenperoxide or a combination of both, and diatomic oxygen gas into thechamber and striking an RF plasma at a power of 50-350 watts for aperiod of from 30-300 seconds. It is hypothesized that the plasmatreatment burns off the carbon particle impurities that are present onthe surface of the dirty silicate glass base layer, thereby reducing thehydrophilic surface characteristics. The plasma treatment also creates ahigh degree of surface uniformity on the PECVD-deposited O₂-TEOS glasslayer.

The second way of forming the base layer involves flowing hydrogenperoxide vapor and at least one gaseous compound selected from the groupconsisting of silane and disilane into the deposition chamber. As anoptional step, the clean base layer formed via this second method may besubjected to a plasma treatment identical to that performed on the dirtyPECVD-deposited O₂-TEOS glass layer. This optional plasma treatment stepis performed merely to improve surface uniformity, not reducehydrophilic surface characteristics.

Following the formation of the clean base layer, a final glass layer isdeposited over the PECVD-deposited glass layer using chemical vapordeposition and TEOS and ozone as precursor compounds.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a portion of an in-processintegrated circuit which has been subjected to a conventional blanketdeposition of ozone-TEOS silicate glass;

FIG. 2 is a cross-sectional view of a portion of an in-processintegrated circuit identical to that of FIG. 1 following deposition of aglass base layer;

FIG. 3 is a cross-sectional view of the in-process circuit portion ofFIG. 2 following plasma treatment;

FIG. 4 is a cross-sectional view of the in-process circuit portion ofFIG. 3 following the deposition of a final ozone-TEOS glass layer; and

FIG. 5 is a flow chart summarizing the various steps of the invention.

DETAILED DESCRIPTION OF THE INVENTION

This invention is embodied in a process for depositing highly conformalsilicate glass layers via chemical vapor deposition through the reactionof tetraethylorthosilane (TEOS) and O₃. The entire process, which can beperformed in a single cluster tool or even in a single chamber, beginsby placing an in-process semiconductor wafer in a plasma-enhancedchemical vapor deposition chamber. In a typical case, hundreds ofintegrated circuits are undergoing simultaneous fabrication on thewafer, and each integrated circuit has topography with multiple surfaceconstituents. FIG. 2 is a cross-sectional view which depicts a smallportion of an integrated circuit identical to that of FIG. 1. Aplurality of parallel aluminum conductor lines 12 overlies a silicondioxide layer 13 (previously referred to as PECVD-TEOS layer 113). Eachaluminum conductor line 12 is covered with a titanium nitride layer 14which served as an anti-reflective coating during a laser reflowoperation which preceded masking and etching steps which formed theconductor lines. Each of the different materials has different surfacecharacteristics which affect the rate of deposition for ozone-TEOS glasslayers.

In order to eliminate surface characteristics, a “clean” silicate glassbase layer is formed which completely covers all existing topography.The base layer must be clean in the sense that its upper surface is freeof hydrophilic carbon particle impurities which would interfere with thedeposition of an ozone-TEOS final glass layer. The clean base layer maybe formed in one of two ways.

Referring now to FIG. 2, the first way involves depositing a “dirty”silicate glass base layer 21 on all constituent surfaces viaplasma-enhanced chemical vapor deposition (PECVD). The PECVD depositionof the silicate glass base layer 21 is performed in a deposition chamberin which a plasma is formed from a mixture of TEOS, oxygen and an inertcarrier gas such as helium or argon which transports TEOS molecules tothe chamber.

Deposition of the PECVD silicate glass base layer 21 is effected withina plasma deposition chamber at a pressure within a range of about 1-50torr (preferably within a range of about 1-10 torr), an oxygen flow rateof about 100-1000 sccm, a carrier gas flow rate of about 100-1500 sccm,and with an RF power density of about 0.7 watts/cm² to about 3.0watt/cm². The deposition temperature is maintained within a range ofabout 300 to 500° C., with a preferred temperature of about 375° C. Thisprocess is described in greater detail in U.S. Pat. No. 4,872,947, whichissued to Chang et al., and is assigned to Applied Materials, Inc. Thispatent is incorporated herein by reference.

A suitable CVD/PECVD reactor in which the present process can be carriedout in its entirety is also described in U.S. Pat. No. 4,872,947.Silicate glass layers can be deposited using standard high frequency RFpower or a mixed frequency RF power.

The silicate glass base layer 21 is deposited to an average thicknesswithin a range of about 100 to 1000 Å. The optimum thickness is deemedto be approximately 500 Å. Although the deposition rate ofplasma-enhanced chemical-vapor-deposited oxide from TEOS and O₂ is moreeven on different surfaces than it is for ozone-TEOS oxide, it isessential that all surfaces are completely covered.

An untreated TEOS silicate glass layer deposited via a plasma-enhancedCVD process tends to have embedded elemental carbon particles which areformed as the TEOS precursor gas is attacked by oxygen radicalsgenerated by the plasma. These carbon particles apparently imparthydrophilic surface characteristics to an untreated silicate glass baselayer 21 which are most likely responsible for the uneven depositionrates observed during subsequent depositions of dense, high-qualityPECVD ozone-TEOS glass layers. In order to reduce or eliminate suchinterfering surface characteristics, the dirty silicate glass base layer21 is subjected to a plasma treatment which involves flowing a mixtureof an oxygen-containing diamagnetic oxidant gas, such as ozone (O₃) orhydrogen peroxide (H₂O₂) or a combination of both, and diatomic oxygen(O₂) gas into the chamber and striking an RF plasma. A mixture of 4 to15 percent O₃ or H₂O₂ in O₂ is admitted to the chamber at a flow rate ofabout 2,400 standard cc/min. The plasma is sustained at a power densitysetting of 0.25 watt/cm² to about 3.0 watt/cm² for a period of from30-360 seconds. In order to prevent etching of the deposited silicateglass base layer 21 and uncovering of additional impurity sites, aremote-source plasma generator is preferred over a parallel-platereactor. The plasma treatment is represented by FIG. 3, which depicts aplasma cloud 31 which completely engulfs the in-process integratedcircuit portion of FIG. 2, thereby exposing all surfaces of the silicateglass base layer 21 to the oxygen plasma. It is hypothesized that theplasma treatment burns off impurities, such as the carbon particles,which are present in the PECVD-deposited silicate glass base layer 21,thereby reducing or eliminating the hydrophilic surface characteristics.The plasma treatment creates a high degree of surface uniformity on thePECVD-deposited silicate glass base layer 21.

Referring once again to FIG. 2, which may also be used to represent thesecond method of forming a clean silicate glass base layer 21 involves anon-plasma-enhanced chemical vapor deposition effected by flowinghydrogen peroxide vapor and at least one gaseous compound selected fromthe group consisting of silane and disilane into the deposition chamber.A clean silicate glass base layer having no imbedded carbon particleimpurities is deposited. The reaction of hydrogen peroxide vapor witheither silane or disilane is performed within a temperature range ofabout 0° C. to 40° C., at a chamber pressure of less than about 10 torr,and at a flow rate maintained for silane or disilane within a range ofabout 10 sccm to 1,000 sccm. The hydrogen peroxide is introduced intothe deposition chamber in combination with at least one carrier gasselected from the group consisting of nitrogen and the noble gases. Thehydrogen peroxide is picked up by the carrier gas in a bubblerapparatus, and the flow rate of the carrier gas (with the hydrogenperoxide) into the deposition chamber is maintained within a range ofabout 50 sccm to 1,000 sccm. In addition, the hydrogen peroxide may beintroduced into the deposition chamber via liquid injection using aliquid-flow controller in combination with a vaporizer.

As an optional step, the clean base layer formed via this second methodmay be subjected to a plasma treatment identical to that performed onthe dirty PECVD-deposited O₂-TEOS glass layer. This optional plasmatreatment step is performed merely to improve surface uniformity, notreduce hydrophilic surface characteristics.

Referring now to FIG. 4, an ozone-TEOS silicate glass layer 41 isdeposited on top of the clean silicate glass base layer 42. As theprocesses required for the formation of the silicate glass base layer,the plasma treatment step, and the ozone-TEOS deposition step sharecertain parameters in common, the same chamber can be used for allprocess steps. For the plasma treatment step, the TEOS flow and theconcomitant carrier gas flow are terminated, plasma generationcontinues, and ozone is added to the still flowing O₂ gas. For theozone-TEOS deposition step, the TEOS flow is resumed and the O₂ and O₃ratios are adjusted as necessary. The ozone-TEOS deposition step isaccomplished by flowing TEOS, oxygen and ozone gases into the depositionchamber, which is maintained at a pressure greater than 10 torr, and,preferably, within a range of about 500 to 760 torr. Substratetemperatures are maintained within a range of about 300-600° C., andpreferably at a temperature of about 400° C. A dense, highly conformalozone-TEOS silicate glass layer 41 is deposited that rapidly fills inthe remaining gaps between the aluminum conductor lines 12. Theozone-TEOS silicate glass layer 41 demonstrates a high degree ofconformality upon deposition. Cavities present in ozone-TEOS silicateglass layers deposited using conventional deposition methods areeliminated.

The present process is highly advantageous because deposition of thePECVD silicate glass base layer 21, plasma treatment of the silicateglass base layer 21, and deposition of the ozone-TEOS silicate glasslayer 41 can be performed in sequence, in the same reaction chamber,requiring a minimum of changes in the reactor, and without having toremove the substrate from the reaction chamber between the varioussteps. Likewise, if the silicate glass base layer is deposited usinghydrogen peroxide and silane or disilane as precursors, all steps may beperformed within the same reaction chamber without having to remove thesubstrate from the chamber between the various steps.

FIG. 5 summarizes the various options of the process which is thesubject of this disclosure. The first major step, providing a “clean”silicate glass base layer 51, can be performed in two basic ways: thedirty deposition and cleaning route 52 using TEOS and O₂ as precursorgases for a PECVD deposition step 53 followed by a cleaning plasmatreatment step 54 involving O₂ and H₂O₂ and/or O₃, or the CVD route 55using silane or disilane and H₂O₂ as precursor gases in a CVD depositionstep 56 and, optionally, the plasma surface treatment of step 54. Thefinal step 57 is CVD deposition of a final glass layer using TEOS and O₃as precursor gases.

Various changes to the gas mixtures, temperature and pressure of thereactions are contemplated and are meant to be included herein. Althoughthe ozone-TEOS glass deposition process is described in terms of only asingle embodiment, it will be obvious to those having ordinary skill inthe art of semiconductor integrated circuit fabrication that changes andmodifications may be made thereto without departing from the scope andthe spirit of the invention as hereinafter claimed.

1. A deposition method for a semiconductor wafer in a vapor depositionchamber having a plasma generator comprising: flowing a gaseous mixturecomprising TEOS and diatomic oxygen into the vapor deposition chamberwhile generating a plasma in the vapor deposition chamber for depositinga silicate glass base layer having an upper surface on the semiconductorwafer, the silicate glass base layer having carbon particle impuritieson the upper surface thereof; subjecting the silicate base layer to aplasma ignited in a gaseous atmosphere in the vapor deposition chambercontaining a mixture of diatomic oxygen and a diamagnetic,oxygen-containing oxidant for a period sufficient to convert the carbonparticle impurities to a carbon-containing gas for removal from thevapor deposition chamber; and forming another glass layer on the uppersurface by flowing TEOS gas and ozone gas into the vapor depositionchamber.
 2. The method of claim 1, wherein the diamagnetic,oxygen-containing oxidant is selected from the group consisting of ozoneand hydrogen peroxide.
 3. The method of claim 1, wherein a thickness ofthe silicate glass base layer is within a range of 100-1000 Å.
 4. Themethod of claim 1, wherein the plasma ignited in the gaseous atmospherecontaining the diamagnetic, oxygen-containing oxidant is maintained at apower density setting within a range of about 0.7 to 3.0 watts/cm². 5.The method of claim 1, wherein the silicate glass base layer issubjected to the plasma ignited in the gaseous atmosphere for a periodof 30 to 360 seconds.
 6. The method of claim 1, wherein a final glasslayer is deposited at a temperature within a range of about 300 to 600°C.
 7. The method of claim 1, wherein a final glass layer is deposited atpressures within a range of about 10 to 760 torr.
 8. A deposition methodfor depositing a TEOS silicate glass layer on a semiconductor wafer in adeposition chamber, comprising: flowing a gaseous mixture comprising atleast TEOS and diatomic oxygen into the deposition chamber whilegenerating a plasma in the deposition chamber for depositing a silicateglass base layer having an upper surface on the semiconductor wafer, thesilicate glass base layer having carbon particle impurities on the uppersurface thereof; subjecting the silicate base layer to a plasma ignitedin a gaseous atmosphere in the deposition chamber containing a mixtureof diatomic oxygen and a diamagnetic, oxygen-containing oxidant for aperiod sufficient to convert the carbon particle impurities to acarbon-containing gas for removal from the deposition chamber; andforming another glass layer over the silicate glass base layer byeffecting a chemical vapor deposition reaction between TEOS gas andozone gas.
 9. The method of claim 8, wherein the diamagnetic,oxygen-containing oxidant is selected from the group consisting of ozoneand hydrogen peroxide.
 10. The method of claim 8, wherein a thickness ofthe silicate glass base layer is within a range of 100-1000 Å.
 11. Themethod of claim 8, wherein the plasma ignited in the gaseous atmospherecontaining the diamagnetic, oxygen-containing oxidant is maintained at apower density setting within a range of about 0.7 to 3.0 watts/cm². 12.The method of claim 8, wherein the silicate glass base layer issubjected to the plasma ignited in the gaseous atmosphere for a periodof 30 to 360 seconds.
 13. The method of claim 8, wherein a final glasslayer is deposited at a temperature within a range of about 300 to 600°C.
 14. The method of claim 8, wherein a final glass layer is depositedat pressures within a range of about 10 to 760 torr.
 15. A method for anin-process semiconductor wafer in a vapor deposition chamber having aplasma generator comprising: flowing a gaseous mixture comprising TEOSand oxygen into the vapor deposition chamber while generating a plasmain the vapor deposition chamber for depositing a silicate glass baselayer having an upper surface on the in-process semiconductor wafer, thesilicate glass base layer having carbon particle impurities on the uppersurface thereof; subjecting the silicate glass base layer to a plasmaignited in a gaseous atmosphere in the vapor deposition chambercontaining a mixture of oxygen and a diamagnetic, oxygen-containingoxidant for a period sufficient to convert the carbon particleimpurities to a carbon-containing gas for removal from the chemicaldeposition chamber; and forming another glass layer on the upper surfaceby flowing TEOS gas and ozone gas into the chemical vapor depositionchamber.
 16. The method of claim 15, wherein the oxygen comprisesdiamagnetic, oxygen-containing oxidant and is selected from the groupconsisting of ozone and hydrogen peroxide.
 17. The method of claim 15,wherein a thickness of the silicate glass base layer is within a rangeof 100-1000 Å.
 18. The method of claim 15, wherein the plasma ignited inthe gaseous atmosphere containing a diamagnetic, oxygen-containingoxidant maintained at a power density setting within a range of about0.7 to 3.0 watts/cm².
 19. The method of claim 15, wherein the silicateglass base layer is subjected to the plasma ignited in the gaseousatmosphere for a period of 30 to 360 seconds.
 20. The method of claim15, wherein the another glass layer is deposited at a temperature withina range of about 300 to 600° C.
 21. The method of claim 15, wherein theanother glass layer is deposited at pressures within a range of about 10to 760 torr.
 22. A method for depositing a TEOS silicate glass layer onan in-process semiconductor wafer in a deposition chamber, comprising:flowing a gaseous mixture comprising at least TEOS and oxygen whilegenerating a plasma in the deposition chamber for depositing a silicateglass base layer having an upper surface on the in-process semiconductorwafer, the silicate glass base layer having carbon particle impuritieson the upper surface thereof; subjecting the silicate glass base layerto a plasma ignited in a gaseous atmosphere in the deposition chambercontaining a mixture of oxygen and a diamagnetic, oxygen-containingoxidant for a period sufficient to convert the carbon particleimpurities to a carbon-containing gas for removal from the depositionchamber; and forming another glass layer over the silicate glass baselayer by effecting a chemical vapor deposition reaction between TEOS gasand ozone gas.
 23. The method of claim 22, wherein the diamagnetic,oxygen-containing oxidant is selected from the group consisting of ozoneand hydrogen peroxide.
 24. The method of claim 22, wherein a thicknessof the silicate glass base layer comprises a layer within a range ofabout 100-1000 Å.
 25. The method of claim 22, wherein the plasma ignitedin the gaseous atmosphere containing the diamagnetic, oxygen-containingoxidant is maintained at a power density setting within a range of about0.7 to 3.0 watts/cm².
 26. The method of claim 22 wherein the silicateglass base layer is subjected to the plasma ignited in the gaseousatmosphere for a period of 30 to 360 seconds.
 27. The method of claim22, wherein the another glass layer is deposited at a temperature withina range of about 300 to 600° C.
 28. The method of claim 22, wherein theanother glass layer is deposited at pressures within a range of about 10to 760 torr.
 29. A method for an in-process semiconductor wafer in avapor deposition chamber having a plasma generator comprising: flowing agaseous mixture comprising TEOS and oxygen into the vapor depositionchamber during generating a plasma in the vapor deposition chamber fordepositing a silicate glass base layer having an upper surface on thein-process semiconductor wafer, the silicate glass base layer havingcarbon particle impurities on the upper surface thereof; subjecting thesilicate glass base layer to a plasma ignited in a gaseous atmosphere inthe vapor deposition chamber containing a mixture of oxygen and adiamagnetic, oxygen-containing oxidant for a period sufficient toconvert the carbon particle impurities to a carbon-containing gas forremoval from the vapor deposition chamber; and forming another glasslayer on the upper surface during flowing TEOS gas and ozone gas intothe vapor deposition chamber.
 30. The method of claim 29, wherein thediamagnetic, oxygen-containing oxidant is selected from the groupconsisting of ozone and hydrogen peroxide.
 31. The method of claim 29,wherein a thickness of the silicate glass base layer is within a rangeof about 100-1000 Å.
 32. The method of claim 29, wherein the plasmaignited in the gaseous atmosphere containing the diamagnetic,oxygen-containing oxidant is maintained at a power density settingwithin a range of about 0.7 to 3.0 watts/cm².
 33. The method of claim29, wherein the silicate glass base layer is subjected to the plasmaignited in the gaseous atmosphere for a period of 30 to 360 seconds. 34.The method of claim 29, wherein the another glass layer is deposited ata temperature within a range of about 300 to 600° C.
 35. The method ofclaim 29, wherein the another glass layer is deposited at pressureswithin a range of about 10 to 760 torr.
 36. A method for depositing aTEOS silicate glass layer on an in-process semiconductor wafer in adeposition chamber, comprising: flowing a gaseous mixture comprising atleast TEOS and oxygen into the deposition chamber while generating aplasma in the deposition chamber for depositing a silicate glass baselayer having an upper surface on the in-process semiconductor wafer, thesilicate glass base layer having carbon particle impurities on the uppersurface thereof; subjecting the silicate glass base layer to a plasmaignited in a gaseous atmosphere in the deposition chamber containing amixture of oxygen and a diamagnetic, oxygen-containing oxidant for aperiod sufficient to convert the carbon particle impurities to acarbon-containing gas for removal from the deposition chamber; andforming another glass layer over the silicate glass base layer during achemical vapor deposition reaction between TEOS gas and ozone gas. 37.The method of claim 36, wherein the diamagnetic, oxygen-containingoxidant is selected from the group consisting of ozone and hydrogenperoxide.
 38. The method of claim 36, wherein a thickness of thesilicate glass base layer is within a range of about 100-1000 Å.
 39. Themethod of claim 36, wherein the plasma ignited in the gaseous atmospherecontaining the diamagnetic, oxygen-containing oxidant is maintained at apower density setting within a range of about 0.7 to 3.0 watts/cm². 40.The method of claim 36, wherein the silicate glass base layer issubjected to the plasma ignited in the gaseous atmosphere for a periodof 30 to 360 seconds.
 41. The method of claim 36, wherein the anotherglass layer is deposited at a temperature within a range of about 300 to600° C.
 42. The method of claim 36, wherein the another glass layer isdeposited at pressures within a range of about 10 to 760 torr.
 43. Anin-process semiconductor wafer in a vapor deposition chamber having aplasma generator comprising: a silicate glass base layer having an uppersurface formed by flowing a gaseous mixture comprising TEOS and oxygenduring generating a plasma, the silicate glass base layer having carbonparticles in the upper surface subjected to a plasma ignited in agaseous atmosphere in the vapor deposition chamber containing a mixtureof oxygen and a diamagnetic, oxygen-containing oxidant for a periodsufficient to convert the carbon particles to a carbon-containing gasfor removal from the vapor deposition chamber; and a glass layer on theupper surface from flowing TEOS gas and ozone gas.
 44. The in-processsemiconductor wafer of claim 43, wherein the diamagnetic,oxygen-containing oxidant is selected from the group consisting of ozoneand hydrogen peroxide.
 45. The in-process semiconductor wafer of claim43, wherein a thickness of the silicate glass base layer is within arange of 100-1000 Å.
 46. The in-process semiconductor wafer of claim 43,wherein the plasma ignited in the gaseous atmosphere containing thediamagnetic, oxygen-containing oxidant is maintained at a power densitysetting within a range of about 0.7 to 3.0 watts/cm².
 47. The in-processsemiconductor wafer of claim 43, wherein the silicate glass base layeris subjected to the plasma ignited in the gaseous atmosphere for aperiod of 30 to 360 seconds.
 48. The in-process semiconductor wafer ofclaim 43, wherein the glass layer is deposited at a temperature within arange of about 300 to 600° C.
 49. The in-process semiconductor wafer ofclaim 43, wherein the another glass layer is deposited at pressureswithin a range of about 10 to 760 torr.
 50. A TEOS silicate glass layeron an in-process semiconductor wafer in a deposition chamber comprising:a silicate glass base layer having an upper surface formed when flowinga gaseous mixture comprising at least TEOS and oxygen into thedeposition chamber in a plasma, the silicate glass base layer havingcarbon particle impurities on the upper surface thereof subjected to aplasma ignited in a gaseous atmosphere in the deposition chambercontaining a mixture of oxygen and a diamagnetic, oxygen-containingoxidant; and forming another glass layer over the silicate glass baselayer during a chemical vapor deposition reaction between TEOS gas andozone gas.
 51. The TEOS silicate glass layer on an in-processsemiconductor wafer of claim 50, wherein the diamagnetic,oxygen-containing oxidant is selected from the group consisting of ozoneand hydrogen peroxide.
 52. The TEOS silicate glass layer on anin-process semiconductor wafer of claim 50, wherein a thickness of thesilicate glass base layer is within a range of about 100-1000 Å.
 53. TheTEOS silicate glass layer on an in-process semiconductor wafer of claim50, wherein the plasma ignited in the gaseous atmosphere containing thediamagnetic, oxygen-containing oxidant is maintained at a power densitysetting within a range of about 0.7 to 3.0 watts/cm².
 54. The TEOSsilicate glass layer on an in-process semiconductor wafer of claim 50,wherein the silicate glass base layer is subjected to the plasma ignitedin the gaseous atmosphere for a period of 30 to 360 seconds.
 55. TheTEOS silicate glass layer on an in-process semiconductor wafer of claim50, wherein the another glass layer is deposited at a temperature withina range of about 300 to 600° C.
 56. The TEOS silicate glass layer on anin-process semiconductor wafer of claim 50, wherein the another glasslayer is deposited at pressures within a range of about 10 to 760 torr.57. A semiconductor wafer in a vapor deposition chamber having a plasmagenerator comprising: a silicate glass base layer having an uppersurface formed by flowing a gaseous mixture comprising TEOS and oxygenduring a plasma, the silicate glass base layer having carbon particlesin the upper surface subjected to a plasma ignited in a gaseousatmosphere in the chemical vapor deposition chamber containing a mixtureof oxygen and a diamagnetic, oxygen-containing oxidant; and a glasslayer on the upper surface formed from flowing TEOS gas and ozone gas.58. The semiconductor wafer of claim 57, wherein the diamagnetic,oxygen-containing oxidant is selected from the group consisting of ozoneand hydrogen peroxide.
 59. The semiconductor wafer of claim 57, whereina thickness of the silicate glass base layer is within a range of100-1000 Å.
 60. The semiconductor wafer of claim 57, wherein the plasmaignited in the gaseous atmosphere containing the diamagnetic,oxygen-containing oxidant is maintained at a power density settingwithin a range of about 0.7 to 3.0 watts/cm².
 61. The semiconductorwafer of claim 57, wherein the silicate glass base layer is subjected tothe plasma ignited in the gaseous atmosphere for a period of 30 to 360seconds.
 62. The semiconductor wafer of claim 57, wherein the glasslayer is deposited at a temperature within a range of about 300 to 600°C.
 63. The semiconductor wafer of claim 57, wherein the glass layer isdeposited at pressures within a range of about 10 to 760 torr.
 64. ATEOS silicate glass layer on a semiconductor wafer in a depositionchamber comprising: a silicate glass base layer having an upper surfaceformed when flowing a gaseous mixture comprising at least TEOS andoxygen into the deposition chamber in a plasma, the silicate glass baselayer having carbon particle impurities on the upper surface thereofsubjected to a plasma ignited in a gaseous atmosphere in the depositionchamber containing a mixture of oxygen and a diamagnetic,oxygen-containing oxidant; and forming another glass layer over thesilicate glass base layer during a chemical vapor deposition reactionbetween TEOS gas and ozone gas.
 65. The TEOS silicate glass layer on thesemiconductor wafer of claim 64, wherein the diamagnetic,oxygen-containing oxidant is selected from the group consisting of ozoneand hydrogen peroxide.
 66. The TEOS silicate glass layer on thesemiconductor wafer of claim 64, wherein a thickness of the silicateglass base layer is within a range of about 100-1000 Å.
 67. The TEOSsilicate glass layer on the semiconductor wafer of claim 64, wherein theplasma ignited in the gaseous atmosphere containing the diamagnetic,oxygen-containing oxidant is maintained at a power density settingwithin a range of about 0.7 to 3.0 watts/cm².
 68. The TEOS silicateglass layer on the semiconductor wafer of claim 64, wherein the silicateglass base layer is subjected to the plasma ignited in the gaseousatmosphere for a period of 30 to 360 seconds.
 69. The TEOS silicateglass layer on the semiconductor wafer of claim 64, wherein the anotherglass layer is deposited at a temperature within a range of about 300 to600° C.
 70. The TEOS silicate glass layer on the semiconductor wafer ofclaim 64, wherein the another glass layer is deposited at pressureswithin a range of about 10 to 760 torr.
 71. A portion of a semiconductorwafer in a vapor deposition chamber having a plasma generatorcomprising: a silicate glass base layer having an upper surface formedby flowing a gaseous mixture comprising TEOS and oxygen during a plasma,the silicate glass base layer having carbon particles in the uppersurface subjected to a plasma ignited in a gaseous atmosphere in thechemical vapor deposition chamber containing a mixture of oxygen and adiamagnetic, oxygen-containing oxidant; and a glass layer on the uppersurface formed from flowing TEOS gas and ozone gas.
 72. The portion ofthe semiconductor wafer of claim 71, wherein the diamagnetic,oxygen-containing oxidant is selected from the group consisting of ozoneand hydrogen peroxide.
 73. The portion of the semiconductor wafer ofclaim 71, wherein a thickness of the silicate glass base layer is withina range of 100-1000 Å.
 74. The portion of the semiconductor wafer ofclaim 71, wherein the plasma ignited in the gaseous atmospherecontaining the diamagnetic, oxygen-containing oxidant is maintained at apower density setting within a range of about 0.7 to 3.0 watts/cm². 75.The portion of the semiconductor wafer of claim 71, wherein the silicateglass base layer is subjected to the plasma ignited in the gaseousatmosphere for a period of 30 to 360 seconds.
 76. The portion of thesemiconductor wafer of claim 71, wherein the glass layer is deposited ata temperature within a range of about 300 to 600° C.
 77. The portion ofthe semiconductor wafer of claim 71, wherein the glass layer isdeposited at pressures within a range of about 10 to 760 torr.
 78. ATEOS silicate glass layer on a portion of a semiconductor wafer in adeposition chamber comprising: a silicate glass base layer having anupper surface formed when flowing a gaseous mixture comprising at leastTEOS and oxygen into the deposition chamber in a plasma, the silicateglass base layer having carbon particle impurities on the upper surfacethereof subjected to a plasma ignited in a gaseous atmosphere in thedeposition chamber containing a mixture of oxygen and a diamagnetic,oxygen-containing oxidant; and forming another glass layer over thesilicate glass base layer during a chemical vapor deposition reactionbetween TEOS gas and ozone gas.
 79. The TEOS silicate glass layer on theportion of the semiconductor wafer of claim 78, wherein the diamagnetic,oxygen-containing oxidant is selected from the group consisting of ozoneand hydrogen peroxide.
 80. The TEOS silicate glass layer on the portionof the semiconductor wafer of claim 78, wherein a thickness of thesilicate glass base layer is within a range of about 100-1000 Å.
 81. TheTEOS silicate glass layer on the portion of the semiconductor wafer ofclaim 78, wherein the plasma ignited in the gaseous atmospherecontaining the diamagnetic, oxygen-containing oxidant is maintained at apower density setting within a range of about 0.7 to 3.0 watts/cm². 82.The TEOS silicate glass layer on the portion of the semiconductor waferof claim 78, wherein the silicate glass base layer is subjected to theplasma ignited in the gaseous atmosphere for a period of 30 to 360seconds.
 83. The TEOS silicate glass layer on the portion of thesemiconductor wafer of claim 78, wherein the another glass layer isdeposited at a temperature within a range of about 300 to 600° C. 84.The TEOS silicate glass layer on the portion of the semiconductor waferof claim 78, wherein the another glass layer is deposited at pressureswithin a range of about 10 to 760 torr.
 85. A work piece ofsemiconductor material in a vapor deposition chamber having a plasmagenerator comprising: a silicate glass base layer having an uppersurface formed by flowing a gaseous mixture comprising TEOS and oxygenduring a plasma, the silicate glass base layer having carbon particlesin the upper surface subjected to a plasma ignited in a gaseousatmosphere in the vapor deposition chamber containing a mixture ofoxygen and a diamagnetic, oxygen-containing oxidant; and a glass layeron the upper surface formed from flowing TEOS gas and ozone gas.
 86. Thework piece of claim 85, wherein the diamagnetic, oxygen-containingoxidant is selected from the group consisting of ozone and hydrogenperoxide.
 87. The work piece of claim 85, wherein a thickness of thesilicate glass base layer is within a range of 100-1000 Å.
 88. The workpiece of claim 85, wherein the plasma ignited in the gaseous atmospherecontaining the diamagnetic, oxygen-containing oxidant is maintained at apower density setting within a range of about 0.7 to 3.0 watts/cm². 89.The work piece of claim 85, wherein the silicate glass base layer issubjected to the plasma ignited in the gaseous atmosphere for a periodof 30 to 360 seconds.
 90. The work piece of claim 85, wherein the glasslayer is deposited at a temperature within a range of about 300 to 600°C.
 91. The work piece of claim 85, wherein the glass layer is depositedat pressures within a range of about 10 to 760 torr.
 92. A work piecehaving TEOS silicate glass layer on a semiconductor material in adeposition chamber comprising: a silicate glass base layer having anupper surface formed when flowing a gaseous mixture comprising at leastTEOS and oxygen into the deposition chamber in a plasma, the silicateglass base layer having carbon particle impurities on the upper surfacethereof subjected to a plasma ignited in a gaseous atmosphere in thedeposition chamber containing a mixture of oxygen and a diamagnetic,oxygen-containing oxidant; and forming another glass layer over thesilicate glass base layer during a chemical vapor deposition reactionbetween TEOS gas and ozone gas.
 93. The work piece of claim 92, whereinthe diamagnetic, oxygen-containing oxidant is selected from the groupconsisting of ozone and hydrogen peroxide.
 94. The work piece of claim92, wherein a thickness of the silicate glass base layer is within arange of about 100-1000 Å.
 95. The work piece of claim 92, wherein theplasma ignited in the gaseous atmosphere containing the diamagnetic,oxygen-containing oxidant is maintained at a power density settingwithin a range of about 0.7 to 3.0 watts/cm².
 96. The work piece ofclaim 92, wherein the silicate glass base layer is subjected to theplasma ignited in the gaseous atmosphere for a period of 30 to 360seconds.
 97. The work piece of claim 92, wherein the another glass layeris deposited at a temperature within a range of about 300 to 600° C. 98.The work piece of claim 92, wherein the another glass layer is depositedat pressures within a range of about 10 to 760 torr.